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 INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistors
BD376/378/380
DESCRIPTION *DC Current Gain: hFE= 20(Min)@ IC= -1A *Complement to Type BD375/377/379 APPLICATIONS *Designed for medium power linear and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL PARAMETER BD376 VCBO Collector-Base Voltage BD378 BD380 BD376 VCEO Collector-Emitter Voltage BD378 BD380 VEBO IC ICM IB
B
VALUE -50 -75 -100 -45 -60 -80 -5 -2 -3 -1 25 150 -55~150
UNIT
V
V
Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @ TC=25 Junction Temperature Storage Temperature Range
V A A A W
PC TJ Tstg
isc Websitewww.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistors
ELECTRICAL CHARACTERISTICS
TC=25 unless otherwise specified SYMBOL PARAMETER BD376 VCEO(SUS) Collector-Emitter Sustaining Voltage BD378 BD380 BD376 VCBO Collector-Base Voltage BD378 BD380 VCE(sat) VBE(on) Collector-Emitter Saturation Voltage Base-Emitter On Voltage BD376 ICBO Collector Cutoff Current BD378 BD380 IEBO hFE-1 hFE-2 Emitter Cutoff Current DC Current Gain DC Current Gain IC= -1A; IB= -0.1A
B
BD376/378/380
CONDITIONS
MIN -45
TYP.
MAX
UNIT
IC= -100mA ; IB= 0
-60 -80 -50
V
IC= -0.1mA ; IE= 0
-75 -100 -1.0 -1.5 -2 -2 -2 -0.1 40 20 375
V
V V
IC= -1A; VCE= -2V VCB= -45V; IE= 0 VCB= -60V; IE= 0 VCB= -80V; IE= 0 VEB= -5V; IC= 0 IC= -0.15A ; VCE= -2V IC= -1A; VCE= -2V
A
mA
Switching Times ton toff Turn-On Time Turn-Off Time 0.05 0.5 s s
IC= -0.5A; IB1= -IB2= -50mA; VCC= -30V
hFE-1 Classifications 6 40-100 10 63-160 16 100-250 25 150-375
isc Websitewww.iscsemi.cn
2


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